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主要经历:
杏悦登录学士👨‍🦳、硕士

联邦德国明斯特大学博士

1985年至1988年，中国纺织大学基础部👙；1993年起杏悦登录杏悦🈸，博士后，副教授（1996年起），教授（1999年起）👨🏽‍🍼。

教学与研究领域:
固体物理学、计算物理学

新颖自旋电子学材料物性操控的计算机模拟和设计.

Jingguang Che

Professor

Ph.D（1992），Muenster University, Germany.

Research Interests:
Computational simulation and design for manipulating physical properties of new spintronics materials.

Selected   Publications:
1)Q. J. Wang, and J.   G. Che, Origins of Distinctly Different Behaviors of Pd and Pt Contacts on   Graphene, Phys. Rev. Lett. 103, 066802 (2009)

2)Feng Hong and J. G. Che, Low   photoemission intensity near Ef induced by the surface relaxed structure of   CrO2(001), Phys. Rev. Lett., 96, 167206 (2006).

3)J. G. Che, Z. Z. Zhu and C. T.   Chan, Change of ground state configuration induced by the stark shift of   surface states in some bcc(001) surfaces, Phys. Rev. Lett., 82👩‍🍼，3292 (1999).

4)J. G. Che, C. T. Chan, C. H. Kuo,   and T. C. Leung, Faceting induced by ultrathin metal films: a first   principles study, Phys. Rev. Lett., 79, 4230 (1997).

5)H. Wang, and J. G. Che, A route   to multiferroics by non-d0 cation B in magnetic perovskites, EuroPhysLett 96,   67012 (2011).

6)J. G. Che and Hai-Ping Cheng,   First-principles investigation of a monolayer of C60 on h-BN/Ni(111), Phys.   Rev. B 72，115436 (2005).

7)Y. He, X. Y. Wei, C. T. Chan and   J. G. Che, Effect of external electric field on the surface energetics of   Ag/Si(111), Phys. Rev. B 71，045401 (2005).

8)Jingguang Che, Albert Mazur, and   Johanners Pollmann, Structural and electronic properties during the initial   stages of Ge-GaAs(110) interface formation, Phys. Rev., B51, 14470 (1995).